IRFR120NTRLPBF vs IRFL014NTRPBF 比較
詳細並排比較 IRFR120NTRLPBF 由 Infineon 與 IRFL014NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR120NTRLPBF | IRFL014NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar N-channel, fifth generation) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ | — |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at TC=25C | 48 W | — |
| 工作接面溫度範圍 | -55C to +175C | — |
| Avalanche Energy Rated | Yes (fully avalanche rated) | — |
| 封裝 | PG-TO252-3 (DPAK) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | — |
| Lead-Free Finish | Yes (Pb-free) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| 工作溫度範圍 | — | -55 C to +150 C (junction) |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL 等級 | — | Level 1 (per JEDEC J-STD-020) |