IRFR220NTRLPBF vs IRFR3806TRPBF Perbandingan
Perbandingan bersamaan detil IRFR220NTRLPBF dari Infineon dan IRFR3806TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR220NTRLPBF | IRFR3806TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 5 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 22 nC |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | — |
| Power Dissipation (Pd) at Tc=25C | 43 W | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +175 C |
| Paket | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | — |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | — |
| Avalanche Rated | Yes (HEXFET ruggedized design) | Yes (HEXFET family) |
| Technology Family | HEXFET, Planar, Generation 3 | — |
| Transistor Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 43 A |
| On-State Resistance RDS(on) max | — | 15.8 mOhm at VGS = 10 V |
| Power Dissipation (Pd) at Tc = 25 C | — | 71 W |
| Paket / Case | — | TO-252AA (DPAK) |
| Technology | — | HEXFET (IR MOSFET) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Number of Units in IC | — | 1 |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |