IRFR220NTRLPBF vs IRFR3806TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NTRLPBF disebabkan oleh Infineon dan IRFR3806TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR220NTRLPBF IRFR3806TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V —
Continuous Drain Current (Id) at Tc=25C 5 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] 22 nC
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) —
Power Dissipation (Pd) at Tc=25C 43 W —
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +175 C
Kemasan TO-252AA (DPAK), 2 Leads + Tab, SC-63 —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Status RoHS Compliant (Pb-free PBF suffix) —
Packaging Tape & Reel (Left orientation - TRLPBF) —
Avalanche Rated Yes (HEXFET ruggedized design) Yes (HEXFET family)
Technology Family HEXFET, Planar, Generation 3 —
Transistor Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 43 A
On-State Resistance RDS(on) max — 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C — 71 W
Kemasan / Case — TO-252AA (DPAK)
Technology — HEXFET (IR MOSFET)
Gate-Source Voltage (VGS) max — +/- 20 V
Number of Units in IC — 1
Lead-Free / RoHS — Yes (PBF suffix, lead-free)

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