IRFR2405TRPBF vs IRFR1205TRPBF Perbandingan

Perbandingan bersamaan detil IRFR2405TRPBF dari Infineon dan IRFR1205TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR2405TRPBF IRFR1205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 5th generation)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/- 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2 V min, 4 V max
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 43.3 nC
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) + Tab —
Level MSL 1 —
Status RoHS Compliant (Lead-Free PBF suffix) Compliant (PBF suffix = lead-free)
Bebas Halogen [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Continuous Drain Current (ID) at TC=25C — 44 A
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Power Dissition (PD) at TC=25C — 107 W
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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