IRFR2405TRPBF vs IRFR1205TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR2405TRPBF | IRFR1205TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2 V min, 4 V max |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | 43.3 nC |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) + Tab | — |
| Aras MSL | 1 | — |
| Status RoHS | Compliant (Lead-Free PBF suffix) | Compliant (PBF suffix = lead-free) |
| Boson Bebas | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |