IRFR2405TRPBF vs IRFR1205TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR2405TRPBF sa pamamagitan ng Infineon at IRFR1205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR2405TRPBF | IRFR1205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2 V min, 4 V max |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | 43.3 nC |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +175C |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) + Tab | — |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant (Lead-Free PBF suffix) | Compliant (PBF suffix = lead-free) |
| Wala sa Halogen | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |