IRFR3411TRPBF vs IRFR4105TRPBF Perbandingan
Perbandingan bersamaan detil IRFR3411TRPBF dari Infineon dan IRFR4105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR3411TRPBF | IRFR4105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55C to +175C |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (5th generation IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Status RoHS | — | Compliant (lead-free, PBF suffix) |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |