IRFR3710ZTRLPBF vs IRFR6215TRLPBF Perbandingan

Perbandingan bersamaan detil IRFR3710ZTRLPBF dari Infineon dan IRFR6215TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3710ZTRLPBF IRFR6215TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), HEXFET HEXFET Power MOSFET (Fifth Generation)
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
Paket TO-252AA (DPAK), 3-pin (2+tab) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
Suhu Kerja -55 C to +175 C (TJ) —
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Polarity — P-Channel
Drain-Source Voltage (VDS) — -150 V
Continuous Drain Current (ID) at Tc=25C — -13 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 580 mOhm
Total Gate Charge (Qg) typ — 44 nC
Power Dissipation (PD) at Tc=25C — 110 W
Maximum Operating Junction Temperature — 175 C
Level MSL — 1
Lead-Free — Yes

Spek dan Sumber

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