IRFR4105TRPBF vs IRF7469TRPBF Perbandingan

Perbandingan bersamaan detil IRFR4105TRPBF dari Infineon dan IRF7469TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR4105TRPBF IRF7469TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology HEXFET (5th generation IR MOSFET) IR MOSFET™ (HEXFET)
Drain-Source Voltage (V_DS max) 55 V —
Continuous Drain Current (I_D at Tc) 27 A —
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm —
Gate-Source Voltage (V_GS max) 20 V —
Total Gate Charge (Q_G) 22.7 nC —
Power Dissipation (P_D at Tc) 68 W —
Paket TO-252AA (DPAK) 8-SO (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C -55°C to +150°C (Tj)
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] —
Status RoHS Compliant (lead-free, PBF suffix) Compliant
Packaging Type Tape and Reel (TRPBF) —
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Lead-Free — Yes
Bebas Halogen — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon