IRFR4105TRPBF vs IRF7469TRPBF Comparison

Detailed side-by-side comparison of IRFR4105TRPBF by Infineon and IRF7469TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR4105TRPBF IRF7469TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology HEXFET (5th generation IR MOSFET) IR MOSFET™ (HEXFET)
Drain-Source Voltage (V_DS max) 55 V —
Continuous Drain Current (I_D at Tc) 27 A —
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm —
Gate-Source Voltage (V_GS max) 20 V —
Total Gate Charge (Q_G) 22.7 nC —
Power Dissipation (P_D at Tc) 68 W —
Package TO-252AA (DPAK) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C -55°C to +150°C (Tj)
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] —
RoHS Status Compliant (lead-free, PBF suffix) Compliant
Packaging Type Tape and Reel (TRPBF) —
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Lead-Free — Yes
Halogen Free — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

Datasheets & Resources

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