IRFR4105TRPBF vs IRF7469TRPBF 比較

詳細並排比較 IRFR4105TRPBF 由 Infineon 與 IRF7469TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF ✓ 啟用中
Infineon
IRF7469TRPBF IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon

IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon

IRF7469TRPBF ✓ 啟用中

規格比較

參數 IRFR4105TRPBF IRF7469TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology HEXFET (5th generation IR MOSFET) IR MOSFET™ (HEXFET)
Drain-Source Voltage (V_DS max) 55 V —
Continuous Drain Current (I_D at Tc) 27 A —
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm —
Gate-Source Voltage (V_GS max) 20 V —
Total Gate Charge (Q_G) 22.7 nC —
Power Dissipation (P_D at Tc) 68 W —
封裝 TO-252AA (DPAK) 8-SO (SOIC-8)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +175C -55°C to +150°C (Tj)
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] —
RoHS 狀態 Compliant (lead-free, PBF suffix) Compliant
Packaging Type Tape and Reel (TRPBF) —
MSL 等級 [DATA_NEEDED: MSL rating] 1 (unlimited)
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Total Gate Charge (Qg) — 15 nC
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Lead-Free — Yes
無鹵素 — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價