IRFR5305TRPBF vs IRFR1205TRPBF Perbandingan
Perbandingan bersamaan detil IRFR5305TRPBF dari Infineon dan IRFR1205TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5305TRPBF | IRFR1205TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | 44 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Rentang Suhu Kerja | -55 C to +175 C | — |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| Level MSL | 1 | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | Compliant (PBF suffix = lead-free) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 55 V |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V min, 4 V max |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Total Gate Charge (Qg) | — | 43.3 nC |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |