IRFR5305TRPBF vs IRFR1205TRPBF 比較

詳細並排比較 IRFR5305TRPBF 由 Infineon 與 IRFR1205TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中

規格比較

參數 IRFR5305TRPBF IRFR1205TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A 44 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作溫度範圍 -55 C to +175 C —
封裝 TO-252AA (DPAK) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 5th generation)
MSL 等級 1 —
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant (PBF suffix = lead-free)
Lead-Free Finish Yes (PBF suffix) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 55 V
Pulsed Drain Current (IDM) — 160 A
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — 2 V min, 4 V max
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
工作接面溫度 — -55C to +175C
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

資料表與資源

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