IRFR5505TRLPBF vs IRF9Z34NPBF Perbandingan

Perbandingan bersamaan detil IRFR5505TRLPBF dari Infineon dan IRF9Z34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR5505TRLPBF IRF9Z34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
MOSFET Operating Mode Enhancement —
VDS (Drain-Source Voltage) -55 V —
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) -18 A (Tc) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V) —
Total Gate Charge (Qg) 21.3 nC —
Power Dissipation (PD) 57 W (Tc = 25 °C) —
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C (junction)
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC] —
Technology IR MOSFET™ (HEXFET® generation 5) HEXFET (5th generation)
Paket TO-252AA (DPAK), surface mount TO-220AB (through-hole, 3-pin)
Tipe Mounting Surface Mount Through Hole
Lead-Free / RoHS Yes (PBF suffix) —
Level MSL 1 —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)
Status RoHS — Compliant

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