IRFR5505TRLPBF vs IRF9Z34NPBF 比較

詳細並排比較 IRFR5505TRLPBF 由 Infineon 與 IRF9Z34NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5505TRLPBF IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF ✓ 啟用中

規格比較

參數 IRFR5505TRLPBF IRF9Z34NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
MOSFET Operating Mode Enhancement —
VDS (Drain-Source Voltage) -55 V —
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) -18 A (Tc) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V) —
Total Gate Charge (Qg) 21.3 nC —
Power Dissipation (PD) 57 W (Tc = 25 °C) —
工作溫度範圍 -55 °C to +175 °C -55C to +175C (junction)
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC] —
Technology IR MOSFET™ (HEXFET® generation 5) HEXFET (5th generation)
封裝 TO-252AA (DPAK), surface mount TO-220AB (through-hole, 3-pin)
安裝類型 Surface Mount Through Hole
Lead-Free / RoHS Yes (PBF suffix) —
MSL 等級 1 —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)
RoHS 狀態 — Compliant

資料表與資源

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