IRFU5305PBF vs IRF5305PBF Perbandingan
Perbandingan bersamaan detil IRFU5305PBF dari Infineon dan IRF5305PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFU5305PBF | IRF5305PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc | -31 A | — |
| Pulsed Drain Current (IDM) | -110 A (pulsed) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (typical) |
| Power Dissipation (PD) at Tc=25°C | 110 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W | — |
| Paket | IPAK (TO-251AA) Through-Hole, 3 pins | TO-220AB (through-hole, 3-pin + tab) |
| Tipe Mounting | Through Hole | Through Hole |
| Avalanche Rated | Yes (EAS rated) | — |
| RoHS Compliance | Compliant | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Maximum Power Dissition (PD) at TC=25C | — | 110 W |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | — | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | — | [DATA_NEEDED: max RDS(on) at -10V] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | — | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | — | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Lead-Free Plating (PBF suffix) | — | Yes (Pb-free) |
| Status RoHS | — | Compliant |
| Technology | — | HEXFET (planar DMOS) |