IRFZ44NPBF vs IRF1407PBF Perbandingan
Perbandingan bersamaan detil IRFZ44NPBF dari Infineon dan IRF1407PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ44NPBF | IRF1407PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | TO-220AB (3-pin + tab) | TO-220AB (through-hole, 3 leads) |
| Tipe Mounting | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | HEXFET (stripe-planar MOSFET) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| Status RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 130 A |
| Power Dissipation (PD) at TC=25C | — | 330 W |
| On-Resistance RDS(on) at VGS=10V | — | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | — | 160 nC (typical) |
| Maximum Junction Temperature | — | 175 C |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | — | Repetitive avalanche rated |