IRFZ44NPBF vs IRF1407PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NPBF disebabkan oleh Infineon dan IRF1407PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ44NPBF IRF1407PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (3-pin + tab) TO-220AB (through-hole, 3 leads)
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET (Advanced Process) HEXFET (stripe-planar MOSFET)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Status RoHS Compliant —
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 130 A
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Gambaran Suhu Operasi — -55 C to +175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

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