IRFZ44NPBF vs IRLZ44NPBF Perbandingan
Perbandingan bersamaan detil IRFZ44NPBF dari Infineon dan IRLZ44NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ44NPBF | IRLZ44NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | 32 nC |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| Suhu Hubung Kerja | -55C to +175C | -55 °C to +175 °C |
| Paket | TO-220AB (3-pin + tab) | TO-220AB (through-hole, 3 leads) |
| Tipe Mounting | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | HEXFET (advanced process) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |