IRLH5030TRPBF vs IRLR9343TRPBF Perbandingan

Perbandingan bersamaan detil IRLH5030TRPBF dari Infineon dan IRLR9343TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLH5030TRPBF IRLR9343TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLH5030TRPBF IRLR9343TRPBF
FET Type N-Channel P-Channel MOSFET
Technology IR MOSFET (HEXFET) IR HEXFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 13 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC 31 nC (typical)
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
Paket PQFN-8 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK) Surface Mount
Profile Height ≤ 0.9 mm —
Tipe Mounting Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current rating]
On-Resistance RDS(on) max at VGS=-10V — 105 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Power Dissipation (PD) at Tc=25C — 79 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max operating range]
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — 1
Optimized Application — Class-D audio amplifier output stages
Polarity — P-Channel

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