IRLH5030TRPBF vs IRLR9343TRPBF 比較

詳細並排比較 IRLH5030TRPBF 由 Infineon 與 IRLR9343TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 啟用中

規格比較

參數 IRLH5030TRPBF IRLR9343TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLH5030TRPBF IRLR9343TRPBF
FET Type N-Channel P-Channel MOSFET
Technology IR MOSFET (HEXFET) IR HEXFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 13 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC 31 nC (typical)
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
封裝 PQFN-8 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK) Surface Mount
Profile Height ≤ 0.9 mm —
安裝類型 Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current rating]
On-Resistance RDS(on) max at VGS=-10V — 105 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Power Dissipation (PD) at Tc=25C — 79 W
工作溫度範圍 — [DATA_NEEDED: Tj min/max operating range]
RoHS 狀態 — Compliant
Lead-Free — Yes
MSL 等級 — 1
Optimized Application — Class-D audio amplifier output stages
Polarity — P-Channel

資料表與資源

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