IRLML6346TRPBF vs BSS316NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil IRLML6346TRPBF dari Infineon dan BSS316NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6346TRPBF BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
Suhu Hubung Kerja -55C to +150C —
Paket Micro3 / SOT-23 PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET Power MOSFET OptiMOS 2 (Trench)
Level MSL 1 MSL1 (per JEDEC J-STD-020)
Lead-Free Finish Yes (PBF suffix) —
Status RoHS Compliant Compliant
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TA=25C — 1.4 A
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Rentang Suhu Hubung Kerja — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
Automotive Qualification — AEC-Q101 qualified

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