IRLR024NTRPBF vs IRFR024NTRPBF Perbandingan

Perbandingan bersamaan detil IRLR024NTRPBF dari Infineon dan IRFR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR024NTRPBF IRFR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Rds(on) Max @ Vgs=10V 65 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.0 V —
Total Gate Charge (Qg) 10 nC (typical) —
Power Dissipation (Pd) at Tc=25C 45 W —
Rentang Suhu Kerja -55 C to +175 C —
Tipe Mounting Surface Mount Surface Mount
Paket TO-252AA (DPAK) TO-252-3 (DPAK, SC-63), surface mount
Technology HEXFET (Advanced Process Technology) —
Avalanche Rated Yes (fully avalanche rated) —
Gate Drive Level Logic-Level —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
Tipe Transistor — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) — 60 A
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Suhu Hubung Kerja — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)

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