IRLR024NTRPBF vs IRFR024NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR024NTRPBF disebabkan oleh Infineon dan IRFR024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR024NTRPBF IRFR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Rds(on) Max @ Vgs=10V 65 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.0 V —
Total Gate Charge (Qg) 10 nC (typical) —
Power Dissipation (Pd) at Tc=25C 45 W —
Gambaran Suhu Operasi -55 C to +175 C —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan TO-252AA (DPAK) TO-252-3 (DPAK, SC-63), surface mount
Technology HEXFET (Advanced Process Technology) —
Avalanche Rated Yes (fully avalanche rated) —
Gate Drive Level Logic-Level —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
Jenis Transistor — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) — 60 A
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Suhu Hubungan Operasi — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)

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