IRLR8726TRLPBF vs BSC011N03LSIATMA1 Perbandingan
Perbandingan bersamaan detil IRLR8726TRLPBF dari Infineon dan BSC011N03LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRLR8726TRLPBF | BSC011N03LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 86 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM value] |
| On-Resistance RDS(on) Max at VGS=10V | 5.8 mOhm | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Maximum Power Dissipation (PD) at TC=25C | 75 W | — |
| Suhu Hubung Kerja | -55C to +175C | -55 °C to +150 °C |
| Paket | TO-252AA (DPAK) | PG-TDSON-8-7 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology Family | StrongIRFET | — |
| RoHS Compliance | ROHS3 Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Level MSL | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 30 V |
| Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 37 A |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| On-State Resistance RDS(on) at VGS=10V | — | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 96 W |
| Status RoHS | — | Compliant |