IRLR8726TRLPBF vs BSC011N03LSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR8726TRLPBF disebabkan oleh Infineon dan BSC011N03LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IRLR8726TRLPBF | BSC011N03LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 86 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM value] |
| On-Resistance RDS(on) Max at VGS=10V | 5.8 mOhm | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Maximum Power Dissipation (PD) at TC=25C | 75 W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55 °C to +150 °C |
| Kemasan | TO-252AA (DPAK) | PG-TDSON-8-7 (Surface Mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology Family | StrongIRFET | — |
| RoHS Compliance | ROHS3 Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Aras MSL | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 30 V |
| Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 37 A |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| On-State Resistance RDS(on) at VGS=10V | — | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 96 W |
| Status RoHS | — | Compliant |