ISC009N06LM5ATMA1 vs ISC058N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC009N06LM5ATMA1 dari Infineon dan ISC058N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC009N06LM5ATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology OptiMOS 5 60V N-channel trench MOSFET OptiMOS 5 trench MOSFET
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 41 A —
Continuous Drain Current (ID) at Tc 348 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS threshold typical] —
On-Resistance RDS(on) max at VGS=10V 0.9 mOhm —
Power Dissipation at Ta (PD) 3 W —
Power Dissipation at Tc (PD) 214 W —
Rentang Suhu Kerja -55 C to +175 C -55C to +175C
Paket PG-TSON-8-3 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Product Family — OptiMOS 5 40V Normal Level
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

Spek dan Sumber

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