ISC009N06LM5ATMA1 vs ISC058N04NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC009N06LM5ATMA1 disebabkan oleh Infineon dan ISC058N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC009N06LM5ATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology OptiMOS 5 60V N-channel trench MOSFET OptiMOS 5 trench MOSFET
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 41 A —
Continuous Drain Current (ID) at Tc 348 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS threshold typical] —
On-Resistance RDS(on) max at VGS=10V 0.9 mOhm —
Power Dissipation at Ta (PD) 3 W —
Power Dissipation at Tc (PD) 214 W —
Gambaran Suhu Operasi -55 C to +175 C -55C to +175C
Kemasan PG-TSON-8-3 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Product Family — OptiMOS 5 40V Normal Level
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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