ISC011N04NM7VATMA1 vs IAUCN08S7L110ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N04NM7VATMA1 dari Infineon dan IAUCN08S7L110ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC011N04NM7VATMA1 IAUCN08S7L110ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon OptiMOS™ (Trench)
Paket PG-TDSON-8 (source-down) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) —
RoHS Compliance Compliant (per Infineon product page) —
Level MSL MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) — 50 A
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 58 W
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) — 11 mΩ
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS_max]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: V_GS_th]
Total Gate Charge (Q<sub>G</sub>) — [DATA_NEEDED: Q_G_total]
Suhu Hubung Kerja — -55 °C to +175 °C
Status RoHS — Compliant
Automotive Qualified — Yes (AEC-Q101 expected per family)
Polarity — Single N-Channel
Configuration — Single

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