ISC011N04NM7VATMA1 vs IAUCN08S7L110ATMA1 比較
詳細並排比較 ISC011N04NM7VATMA1 由 Infineon 與 IAUCN08S7L110ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC011N04NM7VATMA1 | IAUCN08S7L110ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | OptiMOS™ (Trench) |
| 封裝 | PG-TDSON-8 (source-down) | PG-TDSON-8-34 (TDSON-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| 工作溫度範圍 | -55 °C to +175 °C (TJ) | — |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | — | 50 A |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 58 W |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | — | 11 mΩ |
| Gate-Source Voltage (V<sub>GS</sub>) max | — | [DATA_NEEDED: V_GS_max] |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: V_GS_th] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Q_G_total] |
| 工作接面溫度 | — | -55 °C to +175 °C |
| RoHS 狀態 | — | Compliant |
| Automotive Qualified | — | Yes (AEC-Q101 expected per family) |
| Polarity | — | Single N-Channel |
| Configuration | — | Single |