ISC011N04NM7VATMA1 vs IAUCN08S7L110ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC011N04NM7VATMA1 sa pamamagitan ng Infineon at IAUCN08S7L110ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda
Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC011N04NM7VATMA1 IAUCN08S7L110ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon OptiMOS™ (Trench)
Packhaging PG-TDSON-8 (source-down) PG-TDSON-8-34 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (TJ) —
RoHS Compliance Compliant (per Infineon product page) —
Level ng MSL MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) — 50 A
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 58 W
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) — 11 mΩ
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS_max]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: V_GS_th]
Total Gate Charge (Q<sub>G</sub>) — [DATA_NEEDED: Q_G_total]
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Tindminan RoHS — Compliant
Automotive Qualified — Yes (AEC-Q101 expected per family)
Polarity — Single N-Channel
Configuration — Single

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