ISC011N06LM5ATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N06LM5ATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC011N06LM5ATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Paket PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Rentang Suhu Kerja -55C to +175C -55C to +150C
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg]
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W

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