ISC011N06LM5ATMA1 vs BSC034N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N06LM5ATMA1 disebabkan oleh Infineon dan BSC034N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC011N06LM5ATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Kemasan PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gambaran Suhu Operasi -55C to +175C -55C to +150C
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg]
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga