ISC015N04NM5ATMA1 vs BSC014N04LSIATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N04NM5ATMA1 dari Infineon dan BSC014N04LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC015N04NM5ATMA1 BSC014N04LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench MOSFET) OptiMOS 5 (trench, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) —
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Rentang Suhu Kerja -55 C to +175 C (junction, per OptiMOS 5) -55 C to +150 C
Paket / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Level MSL 1 (per Infineon SuperSO8 family) 1 (per JEDEC J-STD-020)
Drive Level Normal Level (VGS(th) ~3.4 V) —
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, Ta) — 31 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) — 96 W
Power Dissipation (PD, Ta) — 2.5 W
Paket — PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Tradename — OptiMOS

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