ISC015N04NM5ATMA1 vs ISC046N13NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC015N04NM5ATMA1 dari Infineon dan ISC046N13NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC015N04NM5ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 135 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Rentang Suhu Kerja | -55 C to +175 C (junction, per OptiMOS 5) | -55 C to +175 C |
| Paket / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per Infineon SuperSO8 family) | — |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Part Family | — | OptiMOS 6 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |