ISC015N04NM5ATMA1 vs ISC046N13NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N04NM5ATMA1 disebabkan oleh Infineon dan ISC046N13NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC015N04NM5ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 135 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction, per OptiMOS 5) | -55 C to +175 C |
| Kemasan / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per Infineon SuperSO8 family) | — |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Part Family | — | OptiMOS 6 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |