ISC015N06NM5ATMA1 vs IAUC120N06S5N032ATMA1 Perbandingan

Perbandingan bersamaan detil ISC015N06NM5ATMA1 dari Infineon dan IAUC120N06S5N032ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC015N06NM5ATMA1 IAUC120N06S5N032ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A —
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Paket PG-TDSON-8 (PQFN 5x6) Drain-Down PG-TDSON-8-34 (SSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount (Tape and Reel)
Rentang Suhu Kerja -55 C to +175 C -55C to +175C (Tj)
Technology Trench MOSFET (OptiMOS 5) OptiMOS-5 N-Channel
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) 1 —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 120 A
Power Dissipation (PD) at TC=25C — 94 W
On-Resistance RDS(on) max at VGS=10V — 3.2 mOhm
Gate Charge (Qg) typ — 47 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Jumlah Pin — 8
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Gate Resistance (Rg) — [DATA_NEEDED: Rg]
Automotive Qualification — AEC-Q101 qualified
Level MSL — MSL 1 (per JEDEC J-STD-020)
Lead-Free — Yes

Spek dan Sumber

IAUC120N06S5N032ATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon