ISC015N06NM5ATMA1 vs IAUC120N06S5N032ATMA1 比較
詳細並排比較 ISC015N06NM5ATMA1 由 Infineon 與 IAUC120N06S5N032ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC015N06NM5ATMA1 | IAUC120N06S5N032ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | — |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | — |
| Total Power Dissipation (TA) | 3 W | — |
| Total Power Dissipation (TC) | 188 W | — |
| 封裝 | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-34 (SSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount (Tape and Reel) |
| 工作溫度範圍 | -55 C to +175 C | -55C to +175C (Tj) |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS-5 N-Channel |
| RoHS 狀態 | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Power Dissipation (PD) at TC=25C | — | 94 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.2 mOhm |
| Gate Charge (Qg) typ | — | 47 nC |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| 腳位數 | — | 8 |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Gate Resistance (Rg) | — | [DATA_NEEDED: Rg] |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 等級 | — | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |