ISC015N06NM5ATMA1 vs IAUC120N06S5N032ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5ATMA1 disebabkan oleh Infineon dan IAUC120N06S5N032ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC015N06NM5ATMA1 IAUC120N06S5N032ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A —
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Kemasan PG-TDSON-8 (PQFN 5x6) Drain-Down PG-TDSON-8-34 (SSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount (Tape and Reel)
Gambaran Suhu Operasi -55 C to +175 C -55C to +175C (Tj)
Technology Trench MOSFET (OptiMOS 5) OptiMOS-5 N-Channel
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) 1 —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 120 A
Power Dissipation (PD) at TC=25C — 94 W
On-Resistance RDS(on) max at VGS=10V — 3.2 mOhm
Gate Charge (Qg) typ — 47 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Kiraan Pin — 8
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Gate Resistance (Rg) — [DATA_NEEDED: Rg]
Automotive Qualification — AEC-Q101 qualified
Aras MSL — MSL 1 (per JEDEC J-STD-020)
Lead-Free — Yes

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