ISC040N10NM7ATMA1 vs ISC011N04NM7VATMA1 Perbandingan

Perbandingan bersamaan detil ISC040N10NM7ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC040N10NM7ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 Power-Transistor
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at Ta=25°C 18 A —
Continuous Drain Current (ID) at Tc=25°C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta=25°C 3 W —
Power Dissipation (PD) at Tc=25°C 150 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
RDS(on) @ VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Paket PG-TDSON-8-34 (SSO8) PG-TDSON-8 (source-down)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +175°C (TJ max) -55 °C to +175 °C (TJ)
Status RoHS Compliant —
Level MSL MSL1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

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