ISC040N10NM7ATMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC040N10NM7ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC040N10NM7ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 Power-Transistor
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at Ta=25°C 18 A —
Continuous Drain Current (ID) at Tc=25°C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at Ta=25°C 3 W —
Power Dissipation (PD) at Tc=25°C 150 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
RDS(on) @ VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Kemasan PG-TDSON-8-34 (SSO8) PG-TDSON-8 (source-down)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max) -55 °C to +175 °C (TJ)
Status RoHS Compliant —
Aras MSL MSL1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

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