ISC045N03L5SATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil ISC045N03L5SATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC045N03L5SATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 BSZ0901NSIATMA1
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 5 / Trench OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 13 nC @ VGS=10 V [DATA_NEEDED: total gate charge Qg]
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Paket SuperSO8 5x6 (PG-TDSON-8-6) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C -55 C to +150 C (typical MOSFET range)
Status RoHS Compliant Compliant
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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