ISC060N06NM6ATMA1 vs ISC015N06NM5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC060N06NM6ATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC060N06NM6ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 15.2 A —
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 50 W —
Paket PG-TDSON-8 (TDSON-8) PG-TDSON-8 (PQFN 5x6) Drain-Down
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) Trench MOSFET (OptiMOS 5)
Configuration Single N-Channel —
Rentang Suhu Kerja -55C to +175C (junction, per OptiMOS 6 family) -55 C to +175 C
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon