ISC060N06NM6ATMA1 vs ISC015N06NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N06NM6ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC060N06NM6ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 15.2 A —
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 50 W —
Kemasan PG-TDSON-8 (TDSON-8) PG-TDSON-8 (PQFN 5x6) Drain-Down
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) Trench MOSFET (OptiMOS 5)
Configuration Single N-Channel —
Gambaran Suhu Operasi -55C to +175C (junction, per OptiMOS 6 family) -55 C to +175 C
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

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