ISC078N12NM6ATMA1 vs ISC151N08NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC078N12NM6ATMA1 dari Infineon dan ISC151N08NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC078N12NM6ATMA1 - 120V 85A N-Ch MOSFET 7.8mΩ SuperSO8 | Infineon
ISC078N12NM6ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | ISC078N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 120 V | 80 V |
| Continuous Drain Current (ID) at Tc | 85 A | — |
| Continuous Drain Current (ID) at Ta | 13.2 A | — |
| On-Resistance RDS(on) typ at VGS=10V | 7.8 mΩ | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 3 W | — |
| Paket | SuperSO8 (TDSON-8) | PG-TDSON-8 FL |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | — |
| Jumlah Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Lead-Free | Yes | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Alir Berlanjut (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Jumlah Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Kerja | — | -55 °C to +175 °C |