ISZ019N03L5SATMA1 vs IQE012N03LM5CGSCATMA1 Perbandingan

Perbandingan bersamaan detil ISZ019N03L5SATMA1 dari Infineon dan IQE012N03LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE012N03LM5CGSCATMA1 IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISZ019N03L5SATMA1 IQE012N03LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 22 A —
Continuous Drain Current (ID) at TC=25C 40 A —
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) 2 V (typ, per Merlin listing)
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V —
Paket PG-TSDSON-8-FL (5x6 mm) PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (TJ max) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, floor life unlimited)
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
FET Type — N-Channel
Technology — OptiMOS 5 (trench MOSFET)
Continuous Drain Current (ID) @ Ta — 34 A
Continuous Drain Current (ID) @ Tc — 224 A
Maximum RDS(on) @ VGS=10V — 1.15 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
Suhu Hubung Kerja — -55 °C to +175 °C
Status RoHS — Compliant
Lead-Free — Yes

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