ISZ028N03LF2SATMA1 vs ISC028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ028N03LF2SATMA1 dari Infineon dan ISC028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ028N03LF2SATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET 2 (Trench MOSFET) —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 128 A —
Continuous Drain Current (ID) at Ta 22 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) 2.35 V —
On-Resistance (RDS(on)) max 2.8 mΩ —
Power Dissipation (Tc) 83 W —
Power Dissipation (Ta) 3 W —
Paket PG-TSDSON-8 FL (FL = flat lead) PG-TDSON-8-62 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (junction, typical) —
Gate Drive Voltage (recommended) 10 V (logic level at 4.5 V) —
Status RoHS Compliant —
Level MSL 1 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubung Kerja — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)

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