ISZ056N03LF2SATMA1 vs ISC052N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISZ056N03LF2SATMA1 dari Infineon dan ISC052N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ056N03LF2SATMA1 ISC052N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series StrongIRFET 2 OptiMOS 5 30V
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 16 A —
Continuous Drain Current (ID) at Tc 72 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) —
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
Rentang Suhu Kerja -55 C to +175 C -55°C to +150°C
Paket PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-TDSON-8-62 (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 74 A
On-Resistance RDS(on) max at VGS=10V — 5.2 mΩ
Power Dissipation (PD) at TA=25°C — 3 W
Power Dissipation (PD) at TC=25°C — 52 W
Technology — Trench MOSFET (OptiMOS 5)
Polarity — N-Channel
Jumlah Pin — 8
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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