ISZ056N03LF2SATMA1 vs ISC052N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISZ056N03LF2SATMA1 disebabkan oleh Infineon dan ISC052N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISZ056N03LF2SATMA1 ISC052N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series StrongIRFET 2 OptiMOS 5 30V
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 16 A —
Continuous Drain Current (ID) at Tc 72 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) 2.35 V (typ) —
On-Resistance (RDS(on)) max at VGS=10V 5.6 mOhm —
On-Resistance (RDS(on)) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 52 W —
Gambaran Suhu Operasi -55 C to +175 C -55°C to +150°C
Kemasan PG-TSDSON-8 (PQFN 3.3x3.3 mm) PG-TDSON-8-62 (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 74 A
On-Resistance RDS(on) max at VGS=10V — 5.2 mΩ
Power Dissipation (PD) at TA=25°C — 3 W
Power Dissipation (PD) at TC=25°C — 52 W
Technology — Trench MOSFET (OptiMOS 5)
Polarity — N-Channel
Kiraan Pin — 8
Aras MSL — [DATA_NEEDED: MSL rating]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga