ISZ072N06NM6ATMA1 vs IPTG025N15NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISZ072N06NM6ATMA1 dari Infineon dan IPTG025N15NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ072N06NM6ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Dissipasi Listrik (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Paket | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-HSOG-8-1 (TOLG) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C ( Tj max 175C ) | -55 C to +175 C (typical for OptiMOS 6) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 150 V (N-channel trench) |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Continuous Drain Current (ID) at TC=25C | — | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |